trenchfet

Orchid Technologies Designs High-power Industrial Motion controller

TRENCHFET devices drive power electronics in an H-bridge configuration. The two board set provides isolation between the power electronics on the lower board and the control systems on the upper board. Twenty Four Bit high-precision analog conversion... B2B News Asia
industrial - industrial motion control

Latest Vishay Siliconix Billion-Cell-Per-Square-Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance in PowerPAK® SC-75

TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry's... ECN Asia
Integrated Circuits & Semiconductors - Power Sources & Conditioning Devices

Vishay Siliconix Releases 20-V P-Channel TrenchFET Gen III Power MOSFET

TrenchFET Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8. The Si7137DP offers low on-resistance of 1.9 mΩ at 10 V, 2.5 mΩ at 4.5 V, and 3.9 mΩ at 2.5... ECN Asia
Passive & Discrete Components

Vishay's TrenchFET Gen III Family of Power MOSFETs

TrenchFET Gen III family of power MOSFETs was selected from hundreds of nominations to be a finalist for this year's EDN Innovation Awards in the Power Semiconductors category. The Power MOSFETs are used for load switching and dc-to-dc conversion in many... ECN Asia
Power Sources & Conditioning Devices

Vishay Releases TrenchFET Power MOSFET in MICRO FOOT Chipscale Package

TrenchFET power MOSFET in the chipscale MICRO FOOT package to feature backside insulation. The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart... ECN Asia
Integrated Circuits & Semiconductors

Vishay Siliconix Releases 20-V and 30-V P-Channel TrenchFET Power MOSFETs

TrenchFET power MOSFETs with a ±20-V gate source voltage that offers the on-resistance for their device types in the SO-8 footprint. While the available competing devices with these voltage ratings in the SO-8 footprint offer on-resistance only down to... ECN Asia
Power Sources & Conditioning Devices

Siliconix TrenchFET Gen III Power MOSFET from Vishay Intertechnology

TrenchFET power MOSFETs with the release of a new 25-V n-channel device offering the on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK SO-8 package type. The SiR476DP features a maximum on-resistance... ECN Asia
Power Sources & Conditioning Devices

Vishay Siliconix Qualified TrenchFET Power MOSFETs

TrenchFET power MOSFETs with two 60-V devices in a PowerPAKR 1212-8 package rated for a 175 degrees Celsius junction temperature. The Vishay Siliconix n-channel SQ7414EN provides with on resistance of 25 milliohms at a 10-V gate drive, and the p-channel... ECN Asia
Power Sources & Conditioning Devices

Vishay Siliconix AEC-Q101-Qualified TrenchFET Power MOSFETs

TrenchFET power MOSFETs with two 60-V devices in a PowerPAK 1212-8 package rated for a 175°C junction temperature. The Vishay Siliconix n-channel SQ7414EN, with on resistance of 25 milliohms at a 10-V gate drive, and the p-channel SQ7415EN, with an on-resistance... ECN Asia
Power Sources & Conditioning Devices

Vishay TrenchFET Power MOSFETs for OR-ing Applications

TrenchFET Gen II devices being announced depending upon the specific circuit and thermal requirements of their applications. With 36 % lower on-resistance than any similar power MOSFET in the standard SO-8 package, the Si4398DY delivers an rDS(on) rating... ECN Asia
Power Sources & Conditioning Devices

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