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Vishay's New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance
SkyFET® products to use the company's latest TrenchFET® technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V... ECN AsiaPower Sources & Conditioning Devices
Vishay’s Monolithic SkyFET Power MOSFET and Schottky Diode
SkyFET device was tested against competing single-chip MOSFET/Schottky devices as well as discrete MOSFET and Schottky diode combinations using the same controller IC and high-side MOSFET. The circuit using the SkyFET device performed with greater efficiency,... ECN AsiaPower Sources & Conditioning Devices
Vishay Releases Industry's First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling
SkyFET(R) SiE726DF device offers increased efficiency for high-current and high-frequency applications. Optimized for the low-side control switch in synchronous rectification for high-current dc-to-dc converters, VRM applications, graphics cards, and... EDN AsiaAnalog ICs / Discretes - Power Sources / Controllers
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