si4628dy


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si4628dy


Vishay's New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance

 ...atest TrenchFET® technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V gate drive and 3.8 milliohms at 4.5 V. ECN Asia
Power Sources & Conditioning Devices





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