qrr

Class D amplification in action

Qrr/trr); since this influences EMI; its gate charge (Qgd) as this influences switching losses; and, its RDS(on)  because this influences on-state losses. Electromagnetic interference is more problematic in Class D applications than in other switching... EDN Asia
Analog ICs / Discretes

Vishay's New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance

Vishay Intertechnology, Inc. released the first of its monolithic MOSFET and Schottky SkyFET® products to use the company's latest TrenchFET® technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device ... ECN Asia
Power Sources & Conditioning Devices

Optimized DirectFET MOSFETs for high current dc/dc performance

QRR with a 30% improvement in RDS(on) compared to other high-performing 20V synch MOSFETs on the market. Typical RDS(on) for this product is 2.1mOhm (2.7mOhm max.) at 10V. IRF6609 is designed for high performance in high-current (33A or more) synchronous... EDN Asia
Analog ICs / Discretes - Power Sources / Controllers

GaN's breakthrough performance signals new trend in power conversion

Qrr) characteristics for high voltage GaN diode function is same as for commercially available SiC diodes, both being significantly better than state of the art silicon fast recovery diodes (FRED) (Figure 2). This is due to the essential absence of holes... EDN Asia
Power Sources / Controllers - Semiconductors

Fairchild's power product in PCIM China 2007

...er modules; low Qgd 200 to 250V UltraFET trench MOSFETs with low Trr and Qrr for Synchronous Rectification, AC/DC and DC/DC Applications; and impact of mounting-height variation on DC-DC converter FET peak ring voltage. Fairchild Semiconductor EDN Asia
Analog ICs / Discretes - Communication Functions - Component / Hardware / Interconnect - Digital ICs

Vishay Releases New 600-V PFC High-Frequency Rectifier With 11-ns Reverse Recovery Time and Low Forward Voltage Drop of 2.1 V

Vishay Intertechnology, Inc. (NYSE: VSH) launched a new 600-V FRED Pt® Hyperfast tandem rectifier that reduces losses in high-efficiency continuous current mode (CCM) power factor correction (PFC) applications with its extremely fast reverse recovery ... ECN Asia
Passive & Discrete Components - Power Sources & Conditioning Devices

The application-specific power semiconductors

The insulated gate bipolar transistor (IGBT) is one of the most commonly available advanced switching power devices. The IGBT structure is very similar to that of MOSFET as it is also a voltage-controlled device. One difference between these two devices ... ECN Asia
Integrated Circuits & Semiconductors - Power Sources & Conditioning Devices

IXYS Announces Rugged Power MOSFET Technology—PolarHT And PolarHV

Qrr and enhanced dV/dt ruggedness. IXYS' HiPerFETs are targeted at hard switching inverter and power supply applications. These products are currently finding use in demanding IT and telecom switch-mode power supplies that require switching and energy... ECN Asia
Power Sources & Conditioning Devices

Fairchild Launches Sub-2mΩ MOSFET in 3.3x3.3mm Package

Qrr) have been minimized to reduce synchronous MOSFET losses in a buck conversion – enhancements that result in high peak efficiencies, presently unmatched by lateral devices. In addition to the 25V FDMC7570S, Fairchild’s new MOSFETs include the 30V... EDN Asia
Analog ICs / Discretes

Fairchild’s total power device solutions for highly efficient, low-noise LCD TV power designs

Fairchild Semiconductor offers new Stealth II and Hyperfast II diode technology as part of a total power device solution specifically designed to optimize LCD TV switch-mode power supply (SMPS) applications. The new FFP08S60S and FFPF08S60S Stealth II ... EDN Asia
Power Sources / Controllers

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