irf6795m irf6797m

25V DirectFET chipset optimized for high efficiency DC-DC applications

IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. International... EDN Asia
Analog ICs / Discretes

25V DirectFET chipset optimized for DC-DC applications

IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. International... EDN Asia
Analog ICs / Discretes

IR Introduces 25V DirectFET Chipset for DC-DC Apps

IRF6795M and IRF6797M devices are characterised with very low on-resistance (RDS (on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. The IRF6710S2... ECN Asia
Integrated Circuits & Semiconductors

IR Introduces 25V DirectFET Chipset Optimized for High Frequency, High Efficiency DC-DC Applications

IRF6795M and IRF6797M devices are characterised with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. The IRF6710S2... EDN Asia
Analog ICs / Discretes

Related Videos