irf6710s2

25V DirectFET chipset optimized for high efficiency DC-DC applications

IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase. International... EDN Asia
Analog ICs / Discretes

25V DirectFET chipset optimized for DC-DC applications

IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.... EDN Asia
Analog ICs / Discretes

IR Introduces 25V DirectFET Chipset for DC-DC Apps

IRF6710S2, IRF6795M and IRF6797M devices are characterised with very low on-resistance (RDS (on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.... ECN Asia
Integrated Circuits & Semiconductors

IR Introduces 25V DirectFET Chipset Optimized for High Frequency, High Efficiency DC-DC Applications

IRF6710S2, IRF6795M and IRF6797M devices are characterised with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.... EDN Asia
Analog ICs / Discretes

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